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Hafnium dioxide Description:

Hafnium dioxide (HfO2) is an oxide with a high dielectric constant. As a dielectric material, HfO2 is considered an ideal material to replace the traditional SiO2 dielectric layer in field-effect transistors due to its high dielectric constant value (~20), large bandgap width (~5.5 eV), and good stability on silicon substrates. If the size of complementary metal oxide semiconductor devices is low in Chemicalbook μ m. The technology of using silicon dioxide as the traditional gate medium will bring a series of problems such as increased heat generation of chips and loss of polycrystalline silicon. As the size of transistors decreases, the requirement for silicon dioxide medium must become thinner. However, the value of leakage current will sharply increase with the thickness of silicon dioxide medium due to the influence of quantum effects. Therefore, there is an urgent need for a more feasible substance to replace silicon dioxide as the gate medium.

Hafnium dioxide Applications:

For the production of raw materials for metal hafnium and hafnium alloys. Used as refractory materials, anti radioactive coatings, and catalysts.

FACTORY TOUR

Hunan Jinkun New Materials Co., Ltd.